DocumentCode
841867
Title
Preparation of stacked structures based on HTS by MOCVD: growth problems of c-axis and non c-axis BiSrCaCuO/Bi4Ti3O12 heterostructures
Author
Endo, Kazuhiro ; Badica, Petre
Author_Institution
Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Volume
15
Issue
2
fYear
2005
fDate
6/1/2005 12:00:00 AM
Firstpage
3066
Lastpage
3069
Abstract
Several articles report two-layer c-axis heterostructures of Bi4Ti3O12 on BiSrCaCuO. However in some applications, or for integration purposes, multi-layer geometries composed of alternating c-axis or non c-axis thin films might be useful. From this perspective we investigated growth of c-axis and non c-axis BiSrCaCuO on Bi4Ti3O12 structures. The paper mainly focuses on evaluation of the structures from the growth, stability/interdiffusion, uniformity/morphology points of view based on structural and microstructural data.
Keywords
MOCVD; bismuth compounds; calcium compounds; chemical interdiffusion; copper compounds; crystal morphology; high-temperature superconductors; interface structure; strontium compounds; superconducting epitaxial layers; titanium compounds; BSCCO; BiSrCaCuO-Bi4Ti3O12; HTS; MOCVD; growth problems; growth structures; microstructural data; multilayer geometries; non c-axis thin films; stacked structures; structural data; structure morphology; structure uniformity; two-layer c-axis heterostructures; Ferroelectric materials; High temperature superconductors; Josephson junctions; MOCVD; Morphology; Stability; Substrates; Superconducting epitaxial layers; Superconducting materials; Transistors; BSCCO; MOCVD; heterostructures;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2005.848741
Filename
1440317
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