Title :
Intrinsic limitation of transconductance in extremely short silicon MOS transistors
Author :
Ghibaudo, Gerard
Author_Institution :
Sachs & Freeman Associates Inc., Landover, MD
fDate :
8/18/1988 12:00:00 AM
Abstract :
An analysis of the limitation of transconductance by nonstationary transport in extremely short silicon MOS transistors is presented. It is shown using a dynamic Boltzmann transport approach that the transconductance should saturate when reducing the device length to some fraction of the mean free path. In silicon, this limit is found to range around 0.03-0.04 μm for devices operating at 77 K
Keywords :
elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; 0.03 to 0.04 micron; 77 K; Si; analysis; dynamic Boltzmann transport approach; extremely short Si MOS transistors; fraction of mean free path; intrinsic limitation of transconductance; modelling; nonstationary transport; scaling limit; short channel MOSFETs; transconductance saturation;
Journal_Title :
Electronics Letters
