Study of Electrical Stress Effect on SiGe HBT Low-Noise Amplifier Performance by Simulation

Author

Yu, Chuanzhao ; Yuan, J.S. ; Shen, John ; Xiao, Enjun

Author_Institution

Sch. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL

Volume

6

Issue

4

fYear

2006

Firstpage

550

Lastpage

555

Abstract

This paper investigates the hot-carrier-induced performance degradation in a cascode low-noise amplifier using SiGe heterojunction bipolar transistors. Changes in device characteristics due to accelerated hot-carrier stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured device data before and after stress are used in Cadence SpectreRF simulation to evaluate the circuit performance degradation

Keywords

Ge-Si alloys; bipolar analogue integrated circuits; heterojunction bipolar transistors; hot carriers; low noise amplifiers; stress effects; Cadence SpectreRF simulation; SiGe; SiGe HBT low-noise amplifier; circuit performance degradation; electrical stress effect; vertical bipolar inter-company model parameters; Acceleration; Circuit simulation; Data mining; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Hot carriers; Low-noise amplifiers; Silicon germanium; Stress measurement; HBT; S-parameters; SiGe; VBIC model; hot-carriers; low-noise amplifier;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.887464

Filename

4019423