Physical Model of Field Enhancement and Edge Effects of FinFET Charge-Trapping NAND Flash Devices

Author

Hsu, Tzu-Hsuan ; Lue, Hang-Ting ; King, Ya-Chin ; Hsiao, Yi-Hsuan ; Lai, Sheng-Chih ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan

Author_Institution

Emerging Central Lab. (ECL), Macronix Int. Co., Ltd. (MXIC), Hsinchu

Volume

56

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

1235

Lastpage

1242

Abstract

The physical model for field enhancement (FE) and the edge effects of body-tied FinFET charge-trapping NAND Flash devices are extensively studied in this paper. First, analytical equations are derived to provide insight to the FE effect for FinFET devices, and these analytical results are validated by 3-D TCAD simulation and experimental verification. Next, complicated programming and erasing characteristics and transconductance and subthreshold slope (gm/SS) behaviors are completely explained by the nonuniform injection behavior along various corner edges in FinFET. FE allows high program and erase speed and larger memory window. On the other hand, the edge effect complicates the device DC I-V, as well as programming and erasing characteristics, and these must be taken into account in memory circuit design.

Keywords

MOSFET; NAND circuits; flash memories; technology CAD (electronics); 3-D TCAD simulation; FinFET charge-trapping NAND flash devices; edge effects; field enhancement effects; memory circuit design; subthreshold slope; transconductance; Analytical models; Circuit synthesis; Equations; FinFETs; Flash memory; Iron; Laboratories; Nonvolatile memory; SONOS devices; Transconductance; Bandgap-engineered SONOS (BE-SONOS) NAND; body-tied FinFET; edge effect; field enhancement (FE); geometrical effect;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2018713

Filename

4912416