Title :
An Electrical Technique to Measure the Radiation Susceptibility of MOS Gate Insulators
Author :
Boesch, H.E., Jr. ; McGarrity, J.M.
Author_Institution :
U.S. Army Electronics Research and Development Command Harry Diamond Laboratories Adelphi, Maryland 20783
Keywords :
Charge carrier processes; Dielectrics and electrical insulation; Electric variables measurement; Electron traps; Impact ionization; Interface states; Ionizing radiation; MOS capacitors; Testing; Tunneling;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1979.4330233
