DocumentCode

841985

Title

Hydrogen and Deuterium Ion Bombardment Effects in SiO2 Films

Author

Belson, J. ; Wilson, I.H.

Author_Institution

Department of Electronic and Electrical Engineering University of Surrey, Guildford, England

Volume

26

Issue

6

fYear

1979

Firstpage

4819

Lastpage

4823

Keywords

Annealing; Capacitance-voltage characteristics; Deuterium; Hydrogen; Interface states; Nitrogen; Protons; Silicon; Space charge; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.1979.4330234

Filename

4330234