Title :
Novel method for extraction of hole transport parameters in heavily doped n-type emitter
Author :
Pan, Yongping ; Kleefstra, M.
Author_Institution :
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
Abstract :
A novel method is reported for the extraction of the hole transport parameters from the emitter of an n+pn bipolar transistor. The parameters are decoupled with a reliable algorithm based on the numerical solution of the transport equations. Accurate modelling of the optical spectral response of the base current has been achieved.
Keywords :
bipolar transistors; carrier lifetime; heavily doped semiconductors; minority carriers; semiconductor device models; bipolar transistor; heavily doped n-type emitter; hole transport parameters; minority carriers; modelling; n +-p-n device; numerical solution; optical spectral response; semiconductors; transport equations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890752
