DocumentCode
842007
Title
High Sensitivity Non-Destructive Profiling of Radiation Induced Damage in MOS Structures
Author
Ferretti, R. ; Fahrner, W.R. ; Braunig, D.
Author_Institution
Hahn-Meitner-Institut fÿr Kernforschung Berlin GmbH Bereich Datenverarbeitung und Elektronik Glienicker Str. 100, 1000 Berlin 39
Volume
26
Issue
6
fYear
1979
Firstpage
4828
Lastpage
4832
Abstract
A new technique for determining in-depth profiles is presented. It is based on a modified and differentiated Zerbst plot. It operates down to doses of the 1010/cm2 range, and is non-destructive, fast and suited for MOS process control. Extraction of the doping profile is included. The results of 1 MeV and 2 MeV P+ and 600 keV He+ implants in Si are shown as an example. A temperature scan yields activation energies of 0.18 eV, 0.46 eV, and 0.49 eV resp.; for He, this level is localized above Ei, and its capture crossection is 4.7* 10-17 cm2.
Keywords
Atomic layer deposition; Doping profiles; Helium; Implants; Lattices; MOS capacitors; Process control; Silicon; Space charge; Temperature;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1979.4330236
Filename
4330236
Link To Document