• DocumentCode
    842009
  • Title

    Suppression of drain-current overshoot in SOI-MOSFETs using an ultrathin SOI substrate

  • Author

    Hazama, Hirofumi ; Yoshimi, Masato ; Takahashi, Masaharu ; Kambayashi, S. ; Tango, H.

  • Author_Institution
    ULSI Res. Centre, Toshiba Corp., Kawasaki
  • Volume
    24
  • Issue
    20
  • fYear
    1988
  • fDate
    9/29/1988 12:00:00 AM
  • Firstpage
    1266
  • Lastpage
    1267
  • Abstract
    An n-channel SOI-MOSFET fabricated on a very thin (500 Å) SOI substrate exhibited no detectable drain-current overshoot for various gate turn-on pulses. The reason can be ascribed to the suppression of the floating substrate effect, brought about by the quick decay of excess holes
  • Keywords
    insulated gate field effect transistors; 500 A; SOI-MOSFETs; drain-current overshoot; excess holes; floating substrate effect; gate turn-on pulses; quick decay; ultrathin SOI substrate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191789
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842009