Title :
Suppression of drain-current overshoot in SOI-MOSFETs using an ultrathin SOI substrate
Author :
Hazama, Hirofumi ; Yoshimi, Masato ; Takahashi, Masaharu ; Kambayashi, S. ; Tango, H.
Author_Institution :
ULSI Res. Centre, Toshiba Corp., Kawasaki
fDate :
9/29/1988 12:00:00 AM
Abstract :
An n-channel SOI-MOSFET fabricated on a very thin (500 Å) SOI substrate exhibited no detectable drain-current overshoot for various gate turn-on pulses. The reason can be ascribed to the suppression of the floating substrate effect, brought about by the quick decay of excess holes
Keywords :
insulated gate field effect transistors; 500 A; SOI-MOSFETs; drain-current overshoot; excess holes; floating substrate effect; gate turn-on pulses; quick decay; ultrathin SOI substrate;
Journal_Title :
Electronics Letters
