Title :
Low-temperature gate dielectrics formed by plasma anodisation of silicon nitride
Author :
Goswami, R. ; Butcher, J.B. ; Ginige, R. ; Zhang, J.F. ; Taylor, S. ; Eccleston, W.
Author_Institution :
Microelectron. Centre, Middlesex Polytech., London, UK
fDate :
9/29/1988 12:00:00 AM
Abstract :
Silicon nitrides, deposited on silicon by PECVD using an SiH4 /NH3 plasma at 300°C, were anodised in an oxygen plasma at 500°C. The resulting dielectric appears to have lower fixed charge, leakage current and interface trap density than the original PECVD nitride, and to have the potential of use as a gate dielectric for MIS devices in VLSI circuits
Keywords :
CVD coatings; VLSI; anodisation; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; MIS devices; PECVD; Si3N4-Si; VLSI; fixed charge; gate dielectric; interface trap density; leakage current; plasma anodisation;
Journal_Title :
Electronics Letters
