Title :
1.3 μm GaInAsP near-travelling-wave laser amplifiers made by combination of angled facets and antireflection coatings
Author :
Zah, C.E. ; Caneau, Catherine ; Shokoohi, F.K. ; Menocal, S.G. ; Favire, F. ; Reith, L.A. ; Lee, T.P.
Author_Institution :
Bell Commun. Res. Inc., Red Bank, NJ
fDate :
9/29/1988 12:00:00 AM
Abstract :
1.3 μm GaInAsP near-travelling-wave laser amplifiers have been realised by the combination of angled facets and antireflection coatings. Without in situ monitoring on the device itself during dielectric coatings, one can routinely obtain a low effective modal facet reflectivity of 5-8×10-4. The devices had an internal gain of 24±1.5 dB for the TE mode and a single-mode fibre coupling loss of 5 dB/facet
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; indium compounds; semiconductor junction lasers; 1.3 micron; 22.5 to 25.5 dB; GaInAsP; TE mode; angled facets; antireflection coatings; dielectric coatings; effective modal facet reflectivity; internal gain; near-travelling-wave laser amplifiers; single-mode fibre coupling loss;
Journal_Title :
Electronics Letters
