Title :
Optical and Structural Properties of InGaN–AlGaN Ultraviolet Light-Emitting Diodes
Author :
Kim, Sang-Mook ; Kim, Jae Bum ; Jhin, Junggeun ; Baek, Jong Hyeob ; Lee, In Hwan ; Jung, Gun Young
Author_Institution :
Korea Photonics Technol. Inst., Gwangju
Abstract :
We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.
Keywords :
III-V semiconductors; aluminium compounds; flip-chip devices; gallium compounds; indium compounds; light emitting diodes; optical fabrication; sapphire; Al2O3; InGaN-AlGaN; UV LED; current 20 mA; flip-chip LED; optical power; optical property; optical simulation; patterned sapphire substrate; structural property; ultraviolet light-emitting diode; AlGaN; flip-chip; light-emitting diodes (LEDs); patterned sapphire substrate (PSS); silicon optical bench (SiOB); ultraviolet (UV);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.2004700
