• DocumentCode
    842104
  • Title

    Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix

  • Author

    Lv, X.Q. ; Liu, N. ; Jin, P. ; Wang, Z.G.

  • Author_Institution
    Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing
  • Volume
    20
  • Issue
    20
  • fYear
    2008
  • Firstpage
    1742
  • Lastpage
    1744
  • Abstract
    Superluminescent diodes were fabricated by using InAs-AlGaAs self-assembled quantum dots (QDs) as the active region. The ultrawide emitting spectrum of 142 nm was achieved. The short migration length of indium adatoms on AlGaAs surface increases the size dispersion of InAs QDs, resulting in the broadening of optical gain spectrum.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; self-assembly; semiconductor quantum dots; superluminescent diodes; AlGaAs; InAs-AlGaAs; broadband emitting superluminescent diodes; indium adatoms; optical gain spectrum broadening; self-assembled quantum dots; short migration length; ultrawide emitting spectrum; AlGaAs matrix; broadband emitting; quantum dots (QDs); superluminescent diodes (SLDs);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2008.2004696
  • Filename
    4604721
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842104