Variable phase shift of spatially periodic proton-bombarded Schottky coplanar lines

Experimental results on periodic coplanar Schottky-contact transmission lines on semiconducting GaAs, prepared by proton implantation, are presented. It is shown, that this technique reduces the propagation constant and increases the characteristic impedance, whereas the phase velocity further depends on the applied bias voltage. An additional significant result is the simultaneous increase in the quality factor.