Title :
Continuous-wave operation of lateral current injection multiquantum-well laser
Author :
Furuya, Atsushi ; Makiuchi, M. ; Wada, O.
Author_Institution :
Fijitsu Labs. Ltd., Atsugi
fDate :
9/29/1988 12:00:00 AM
Abstract :
Continuous-wave operation of an AlGaAs/GaAs lateral current injection multiquantum-well laser at room temperatures has been achieved by improving the structure and fabrication process. The laser has exhibited a threshold current of 47 mA and a differential quantum efficiency of 11%
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 11 percent; 47 mA; AlGaAs-GaAs; continuous wave operation; differential quantum efficiency; fabrication process; lateral current injection multiquantum-well laser; room temperatures; threshold current;
Journal_Title :
Electronics Letters
