Title :
1.2 Gbit/s, 52.5 km optical fibre transmission experiment using OEICs on GaAs-on-InP heterostructure
Author :
Suzaki, T. ; Fujita, S. ; Inomoto, Y. ; Terakado, T. ; Kasahara, K. ; Asano, Katsunori ; Torikai, T. ; Itoh, Takayuki ; Shikada, Masaaki ; Suzuki, A.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Kawasaki
fDate :
9/29/1988 12:00:00 AM
Abstract :
High-performance, long-wavelength OEICs on a GaAs-on-InP heterostructure were fabricated. For the transmitter OEIC, high-speed operation up to 2.4 Gbit/s was achieved, and a receiver sensitivity as high as -26.0 dBm for a 1.2 Gbit/s NRZ signal was realised for the receiver OEIC. To confirm the usefulness of these OEICs for optical fibre networks, a 1.2 Gbit/s optical fibre transmission experiment was successfully carried out over a 52.5 km span
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical fibres; optical links; 1.2 Gbit/s; 52.5 km; GaAs-InP; NRZ signal; OEICs; high-speed operation; optical fibre networks; optical fibre transmission experiment; receiver sensitivity;
Journal_Title :
Electronics Letters
