• DocumentCode
    842211
  • Title

    Testing models of I/V characteristics of planar-doped barrier diodes

  • Author

    Kearney, M.J. ; Kerr, T.M. ; Kelly, Michael J. ; Condie, A. ; Dale, I.

  • Author_Institution
    GEC Hirst Res. Centre, Wembley, UK
  • Volume
    25
  • Issue
    17
  • fYear
    1989
  • Firstpage
    1145
  • Lastpage
    1147
  • Abstract
    Diodes fabricated from a single planar doped barrier wafer, uniform other than a 30% radial variation of the p-type dopant concentration, produce a range of I/V characteristics that provides a sensitive test of the physics necessary to model these devices accurately.
  • Keywords
    semiconductor device models; semiconductor diodes; semiconductor doping; I/V characteristics; p-type dopant concentration; planar-doped barrier diodes; radial variation; semiconductor device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890769
  • Filename
    41920
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842211