Title :
Testing models of I/V characteristics of planar-doped barrier diodes
Author :
Kearney, M.J. ; Kerr, T.M. ; Kelly, Michael J. ; Condie, A. ; Dale, I.
Author_Institution :
GEC Hirst Res. Centre, Wembley, UK
Abstract :
Diodes fabricated from a single planar doped barrier wafer, uniform other than a 30% radial variation of the p-type dopant concentration, produce a range of I/V characteristics that provides a sensitive test of the physics necessary to model these devices accurately.
Keywords :
semiconductor device models; semiconductor diodes; semiconductor doping; I/V characteristics; p-type dopant concentration; planar-doped barrier diodes; radial variation; semiconductor device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890769
