Modulation-doped (AlGa)As/GaAs quantum well structure with high electron sheet density

Author

Powell, A. ; Roberts, Jeffrey S. ; Rockett, P.I. ; Foster, T.J. ; Eaves, L.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., UK

Volume

25

Issue

17

fYear

1989

Firstpage

1147

Lastpage

1148

Abstract

A single-sided modulation-doped 90 AA quantum well with Al_0.45Ga_0.55As barriers has been realised using metal-organic vapour-phase epitaxy with selenium doping. Hall effect measurements give a sheet carrier density n_s=2.27*10¹² cm^-2 and a mobility mu =6050 cm² V^-1 s^-1 at 300 K. At 4.2 K, Shubnikov-de Haas and quantum Hall effect measurements give n_s=1.52*10¹² cm^-2 and mu =1.28*10⁵ cm² V^-1 s^-1. A persistent increase in n_s to 2.00*10¹² cm^-2 is observed at 4.2 K by passing a large current through the sample for a short period of time.

Keywords

III-V semiconductors; aluminium compounds; carrier density; carrier mobility; gallium arsenide; high electron mobility transistors; quantum Hall effect; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; (AlGa)As/GaAs quantum well structure; 90 AA; Al_0.45Ga_0.55As:Se-GaAs; HEMT; III-V semiconductors; MODFET; MOVPE; Shubnikov-de Haas measurements; carrier mobility; electron sheet density; metal-organic vapour-phase epitaxy; modulation doped quantum well; quantum Hall effect measurements; sheet carrier density; single sided quantum well;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890770

Filename

41921