Title :
Device characteristics of a 30-V-class thin-film SOI power MOSFET
Author :
Matsumoto, Satoshi ; Kim, II-Jung ; Sakai, Tatsuo ; Fukumitsu, Takao ; Yachi, Toshiaki
Author_Institution :
NTT Interdisciplinary Res. Labs., Tokyo, Japan
fDate :
5/1/1996 12:00:00 AM
Abstract :
A 30-V thin-film SOI power MOSFET having a tungsten polycide gate with a linear gate topology has been fabricated at a practical device level. Its electrical characteristics were successfully demonstrated for the first time. The experimental device has 1010 unit cells and a total gate width of 4.04 cm, It has a specific on-resistance of 92 mΩ·mm2 and breakdown voltage of 33 V. The device´s various parasitic capacitance characteristics were measured and compared with those of a lateral power MOSFET fabricated on a bulk-silicon substrate
Keywords :
capacitance; characteristics measurement; power MOSFET; silicon-on-insulator; thin film transistors; 30 V; 33 V; breakdown voltage; electrical characteristics; gate width; linear gate topology; parasitic capacitance characteristics; polycide gate; specific on-resistance; thin-film SOI power MOSFET; Capacitance measurement; Electric variables; MOSFET circuits; Parasitic capacitance; Power MOSFET; Power measurement; Substrates; Thin film devices; Topology; Tungsten;
Journal_Title :
Electron Devices, IEEE Transactions on
