Title :
High-speed self-aligned InP/GaInAs double heterostructure bipolar transistor with high current-driving capability
Author :
Schumacher, H. ; Shantharama, L.G. ; Hayes, J.R. ; Bhat, R. ; Esagui, R. ; Koza, M.
Author_Institution :
Bell Commun. Res., Red Bank, NJ, USA
fDate :
9/29/1988 12:00:00 AM
Abstract :
A fully self-aligned InP/GaInAs double heterostructure transistor has been fabricated using a substitutional emitter process. The small-signal current gain was typically 10-30 with an fT of 27 GHz. The maximum fT=27 GHz occurred at current densities of 7×104 A cm-2, and the associated fmax was 20 GHz, the highest value obtained for InP-based bipolar transistors to date
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; 20 GHz; 27 GHz; InP-GaInAs; current densities; cutoff frequency; double heterostructure bipolar transistor; fully self-aligned; high current-driving capability; maximum oscillation frequency; small-signal current gain; substitutional emitter process;
Journal_Title :
Electronics Letters
