• DocumentCode
    842274
  • Title

    Effects of gamma radiation on threshold voltages of trench isolated CMOS

  • Author

    Medhurst, P L ; Foster, D J

  • Author_Institution
    Plessey Res. (Caswell
  • Volume
    25
  • Issue
    17
  • fYear
    1989
  • Firstpage
    1155
  • Lastpage
    1156
  • Abstract
    Gamma radiation effects on trench isolated CMOS transistors and sidewall parasitic devices are described. Low dose saturation was observed for biased devices, this being attributable to low volume oxide films inherent to trench technology. Leakage currents generated in NMOS transistors were observed to saturate with cumulative irradiation.
  • Keywords
    CMOS integrated circuits; gamma-ray effects; leakage currents; CMOS transistors; NMOS transistors; biased devices; gamma radiation; leakage currents; low dose saturation; low volume oxide films; radiation effects; sidewall parasitic devices; threshold voltages; trench isolated CMOS;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890775
  • Filename
    41926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842274