High-reflectivity AlAs0.52Sb0.48/GaInAs(P) distributed Bragg mirror on InP substrate for 1.3-1.55 mu m wavelengths

Periodic AlAs_0.52Sb_0.48/Ga_0.47In_0.53As quarter-wave distributed Bragg reflectors on InP substrates were prepared and with only eight pairs a peak reflectivity of 90% and a bandwidth of >or=0.2 mu m were measured. By the addition of P to the GaInAs alloy, this mirror structure would be useful for InP-based surface emitting laser application at 1.3-1.55 mu m wavelengths and would be superior to the previously studied GaInAsP/InP structure, where approximately 20 pairs are required to achieve similar reflection.