• DocumentCode
    842363
  • Title

    Heterojunction tunnelling model for pnp and npn polysilicon emitter bipolar transistors

  • Author

    Post, I R C ; Ashburn, P. ; Nouailhat, A.

  • Author_Institution
    Dept. of Electron. & Comput. Sci., Southampton Univ., UK
  • Volume
    28
  • Issue
    25
  • fYear
    1992
  • Firstpage
    2276
  • Lastpage
    2277
  • Abstract
    A new tunnelling model is described which treats the interfacial layer in a polysilicon emitter transistor as a wide bandgap semiconductor. Potential barriers are formed in the valence and conduction bands, the sizes of which vary with the dopant type and concentration in the interfacial layer.
  • Keywords
    bipolar transistors; energy gap; impurity distribution; semiconductor device models; tunnelling; conduction bands; dopant concentration; dopant type; interfacial layer; npn transistors; pnp transistors; polysilicon emitter bipolar transistors; potential barriers; tunnelling model; valence bands; wide bandgap semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921464
  • Filename
    191822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842363