Title :
Heterojunction tunnelling model for pnp and npn polysilicon emitter bipolar transistors
Author :
Post, I R C ; Ashburn, P. ; Nouailhat, A.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Abstract :
A new tunnelling model is described which treats the interfacial layer in a polysilicon emitter transistor as a wide bandgap semiconductor. Potential barriers are formed in the valence and conduction bands, the sizes of which vary with the dopant type and concentration in the interfacial layer.
Keywords :
bipolar transistors; energy gap; impurity distribution; semiconductor device models; tunnelling; conduction bands; dopant concentration; dopant type; interfacial layer; npn transistors; pnp transistors; polysilicon emitter bipolar transistors; potential barriers; tunnelling model; valence bands; wide bandgap semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921464
