DocumentCode :
842416
Title :
Modeling and characterization of electromigration failures under bidirectional current stress
Author :
Tao, Jiang ; Chen, Jone F. ; Cheung, Nathan W. ; Hu, Chenming
Author_Institution :
Siliconix Inc., Santa Clara, CA, USA
Volume :
43
Issue :
5
fYear :
1996
fDate :
5/1/1996 12:00:00 AM
Firstpage :
800
Lastpage :
808
Abstract :
Electromigration reliability of different metallization systems (Al-2%Si, Al-Cu/TiW, Cu, and TiN/Al-2%Si/TiN) and structures (Al-via and W-plug) under bidirectional current stress has been studied in a wide frequency range (from mHz to 200 MHz). The experimental results show that at low frequency, the damage healing factor and lifetime under ac stress increases with frequency. At very high-frequency regions, the pure ac lifetime was found to be determined by the thermal process (caused by asymmetrical geometry, etc.) instead of electromigration. All the observations are in agreement with an average current model
Keywords :
electromigration; failure analysis; integrated circuit metallisation; integrated circuit reliability; AC stress; Al; Al via; AlCu-TiW; AlSi; Cu; TiN-AlSi-TiN; W; W plug; asymmetrical geometry; average current model; bidirectional current stress; damage healing factor; electromigration failure; lifetime; metallization; reliability; thermal process; Electromigration; Frequency; Integrated circuit interconnections; Metallization; Parasitic capacitance; Power system interconnection; Power system reliability; Semiconductor device measurement; Thermal stresses; Tin;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.491258
Filename :
491258
Link To Document :
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