A potential integrated low temperature approach for superconducting MgB2 thin film growth and electronics device fabrication by ion implantation

By implanting high fluence B into Mg targets, we demonstrate clearly that superconducting MgB₂ thin films can be formed at a low process temperature. The superconducting transition temperature T_c values observed are dependent on the growth condition. The ion beam synthesis experimental data are discussed and compared with simulation results of the B implantation process in Mg target. We propose that ion beam synthesis of MgB₂ is a potential approach for the mass production of superconducting electronics devices.