DocumentCode :
842469
Title :
Radiation Effects on Signal and Noise Characteristics of GaAs MESFET Microwave Amplifiers
Author :
Borrego, Jose M. ; Gutmann, Ronald J. ; Moghe, Sanjay B.
Volume :
26
Issue :
6
fYear :
1979
Firstpage :
5092
Lastpage :
5099
Abstract :
The effect of fast neutron and gamma radiation on the electrical characteristics of low noise microwave GaAs MESFET amplifiers has been evaluated. The change in the noise figure and gain at S- and X-band was determined at neutron fluences between 3×1012 to 1×1015 n/cm2 and gamma dose of 2×107 rads (Si). The radiation induced changes are described and the causes for them are discussed.
Keywords :
Gallium arsenide; Low-frequency noise; Low-noise amplifiers; MESFETs; Microstrip; Microwave amplifiers; Neutrons; Noise figure; Noise measurement; Radiation effects;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1979.4330279
Filename :
4330279
Link To Document :
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