• DocumentCode
    842541
  • Title

    Damage induced in p-GaAs due to RIE in CH4/H2 mixture

  • Author

    Sahafi, H.F. ; Goldspink, G.F. ; Rezazadeh, Ali A. ; Webb, A.P. ; Carter, M.A.

  • Author_Institution
    Microelectron. Centre, Middlesex Univ., London, UK
  • Volume
    28
  • Issue
    25
  • fYear
    1992
  • Firstpage
    2300
  • Lastpage
    2302
  • Abstract
    Damaged induced in p-GaAs due to RIE in pure H2 and a mixture of CH4/H2 has been investigated by I-V and C-V measurements on Au/p-GaAs Schottky diodes fabricated following the RIE process. The ideality factor, barrier height, depletion width and carrier concentration of the etched samples were compared with those of a control sample. Considerable eradication of induced damage was observed for the sample which was etched in CH4/H2 mixture and was annealed prior to diode fabrication.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; annealing; carrier density; gallium arsenide; gold; sputter etching; Au-GaAs; C-V characteristics; GaAs; H 2; I-V characteristics; RIE damage; Schottky diodes; annealing; barrier height; carrier concentration; depletion width; ideality factor; methane-H 2; p-type; plasma exposure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921480
  • Filename
    191838
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842541