Title :
Damage induced in p-GaAs due to RIE in CH4/H2 mixture
Author :
Sahafi, H.F. ; Goldspink, G.F. ; Rezazadeh, Ali A. ; Webb, A.P. ; Carter, M.A.
Author_Institution :
Microelectron. Centre, Middlesex Univ., London, UK
Abstract :
Damaged induced in p-GaAs due to RIE in pure H2 and a mixture of CH4/H2 has been investigated by I-V and C-V measurements on Au/p-GaAs Schottky diodes fabricated following the RIE process. The ideality factor, barrier height, depletion width and carrier concentration of the etched samples were compared with those of a control sample. Considerable eradication of induced damage was observed for the sample which was etched in CH4/H2 mixture and was annealed prior to diode fabrication.
Keywords :
III-V semiconductors; Schottky-barrier diodes; annealing; carrier density; gallium arsenide; gold; sputter etching; Au-GaAs; C-V characteristics; GaAs; H 2; I-V characteristics; RIE damage; Schottky diodes; annealing; barrier height; carrier concentration; depletion width; ideality factor; methane-H 2; p-type; plasma exposure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921480
