Title :
Improvement of RF performance of GaAs/Si MESFETs using buried oxygen implantation
Author :
Sriram, S. ; Messham, R.L. ; Smith, T.J. ; Eldridge, G.W.
Author_Institution :
Northrop Grumman Sci. & Technol. Centre, Pittsburgh, PA, USA
fDate :
5/1/1996 12:00:00 AM
Abstract :
A novel buried oxygen implantation (BOI) procedure is described to reduce parasitics and improve RF performance of GaAs/Si MESFETs. Devices fabricated with this procedure show output conductance of less than 8.5 mS/mm which is the lowest reported to date for GaAs/Si MESFETs. These results are particularly important to improve the power performance of GaAs/Si MESFETs
Keywords :
III-V semiconductors; Schottky gate field effect transistors; elemental semiconductors; gallium arsenide; ion implantation; microwave field effect transistors; silicon; BOI procedure; GaAs-Si; MESFET; RF performance; buried oxygen implantation; output conductance; parasitics; power performance; Buffer layers; Equivalent circuits; Gallium arsenide; MESFETs; Oxygen; Parasitic capacitance; Radio frequency; Semiconductor device modeling; Silicon; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
