Power bipolar transistors with a fast recovery integrated diode

Author

Coffa, S. ; Magrí, A. ; Frisina, F. ; Privitera, V.

Author_Institution

IMETEM, CNR, Catania, Italy

Volume

43

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

836

Lastpage

839

Abstract

We have integrated a fast recovery diode in the structure of a power bipolar transistor. This integral diode is physically connected between the emitter and the collector of the transistor and can be used as a free-wheeling diode in power switches. Selective reduction of the minority carrier lifetime in the region of the diode was realized by Pt implantation in the diode area followed by an optimized thermal process that limits the lateral diffusion of the metal atoms. Using this metal doping a reduction by a factor of 10 of the reverse recovery charges of the integrated diode is obtained without affecting significantly the current carrying capability of the transistor

Keywords

bipolar transistor switches; carrier lifetime; minority carriers; power bipolar transistors; power semiconductor switches; Si:Pt; current carrying capability; fast recovery integrated diode; free-wheeling diode; lateral diffusion; minority carrier lifetime; optimized thermal process; power bipolar transistors; power switches; reverse recovery charges; Bipolar transistors; Charge carrier lifetime; Degradation; Diodes; Doping; Electrons; Fabrication; Implants; MOSFETs; Switching circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.491262

Filename

491262