• DocumentCode
    842574
  • Title

    Linear, electronically tunable resistor

  • Author

    Tsividis, Yannis ; Vavelidis, Kostis

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Tech. Univ. of Athens, Greece
  • Volume
    28
  • Issue
    25
  • fYear
    1992
  • Firstpage
    2303
  • Lastpage
    2305
  • Abstract
    A technique for converting a MOSFET into a highly linear, electronically tunable resistor is described. The key to the linearisation achieved is the application of voltages across the gate and across the body, in such a way that the gate-channel and body-channel potentials remain constant all along the channel. Measurements show distortion levels of less than -75 dB for signal amplitudes of 6 V peak to peak.
  • Keywords
    MOS integrated circuits; insulated gate field effect transistors; linear integrated circuits; resistors; MIETEC process; MOSFET; body-channel potentials; distortion levels; gate channel potential; integration; linear electronically tunable resistor; linearisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921482
  • Filename
    191840
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842574