Monolithic GaAs transimpedance amplifiers for fiber-optic receivers

Author

Scheinberg, Norman ; Bayruns, Robert J. ; Laverick, Timothy M.

Author_Institution

Anadigics Inc., Warren, NJ, USA

Volume

26

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1834

Lastpage

1839

Abstract

The authors describe the design of transimpedance amplifiers using GaAs MESFET technology. A GaAs transimpedance preamplifier for fiber-optic receivers has been fabricated with two gain stages and an inducer-FET load structure that reduces noise. The two-stage amplifier design provides increased open-loop gain as compared with a single-stage design, and greater closed-loop stability than a three-stage amplifier. An automatic-gain-control (AGC) circuit that varied the value of the feedback resistor was incorporated into the design

Keywords

III-V semiconductors; Schottky gate field effect transistors; automatic gain control; field effect integrated circuits; gallium arsenide; linear integrated circuits; optical communication equipment; preamplifiers; receivers; wideband amplifiers; AGC; GaAs; MESFET technology; automatic-gain-control; closed-loop stability; feedback resistor; fiber-optic receivers; inducer-FET load structure; monolithic IC; open-loop gain; preamplifier; transimpedance amplifiers; two-stage amplifier design; Bandwidth; Circuit noise; Detectors; Diodes; FETs; Frequency; Gallium arsenide; Noise generators; Noise reduction; Resistors;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.104175

Filename

104175