An amorphous silicon TFT with annular-shaped channel and reduced gate-source capacitance

Author

Byun, Young Hee ; Den Boer, Willem ; Yang, Mohshi ; Gu, Tieer

Author_Institution

Opt. Imaging Syst. Inc., Northville, MI, USA

Volume

43

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

839

Lastpage

841

Abstract

An amorphous silicon thin-film transistor (a-Si TFT) with an annular-shaped channel is presented. The annular-channel TFT (AC-TFT) is fabricated using standard design rules with 4 μm minimum feature size which is common in large area applications such as active matrix LCD´s. The AC-TFT has two times smaller gate-to-source capacitance of about 50 fF in the on-state as compared to a conventional rectangular-channel TFT (RC-TFT) which has the same on-current of more than 10 μA at V_gs=20 V and V_ds=10 V. Its off-current under illumination from the gate side is about ten times lower than that of the RC-TFT

Keywords

amorphous semiconductors; capacitance; elemental semiconductors; field effect transistor switches; liquid crystal displays; silicon; thin film transistors; 10 V; 20 V; 4 micron; 50 fF; Si; TFT; active matrix LCD; annular-shaped channel; minimum feature size; off-current; on-current; reduced gate-source capacitance; standard design rules; Amorphous silicon; Capacitance; Conductivity; Diodes; Doping; Electrical resistance measurement; Electron devices; Geometry; Temperature distribution; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.491263

Filename

491263