Submicron scaling of AlGaAs/GaAs self-aligned thin emitter heterojunction bipolar transistors (SATE-HBT) with current gain independent of emitter area

Author

Malik, R.J. ; Lunardi, L.M. ; Ryan, R.W. ; Shunk, S.C. ; Feuer, Mark D.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

25

Issue

17

fYear

1989

Firstpage

1175

Lastpage

1177

Abstract

A new, self-aligned process technology for AlGaAs/GaAs heterojunction bipolar transistors (HBT) has been developed, which is based upon ultrathin (100-200 AA) AlGaAs emitter layers. The thin AlGaAs emitter is used as a selective etch stop layer for contacting the p⁺ base layer and acts as an integral surface passivation layer which eliminates recombination currents in the extrinsic base region. This novel technology yields transistors with emitter dimensions as small as 0.3*4.0 mu m² and current gain values independent of emitter area.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; heterojunction bipolar transistors; passivation; 100 to 200 AA; AlGaAs-GaAs; SATE HBT; current gain; current gain values; emitter area; emitter dimensions; extrinsic base region; integral surface passivation layer; selective etch stop layer; self-aligned process technology; self-aligned thin emitter heterojunction bipolar transistors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890788

Filename

41939