Title :
Low threshold 1.3 mu m strained-layer AlxGayIn1-x-yAs quantum well lasers
Author :
Zah, C.E. ; Bhat, Ritesh ; Favire, F.J. ; Koza, M. ; Lee, T.P. ; Darby, D. ; Hsieh, J.J.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
Low threshold 1.3 mu m lasers using compressive- as well as tensile-strained single AlxGayIn1-x-yAs quantum wells (100 and 188 A/cm2, respectively), are demonstrated. Low threshold currents of 2 mA at 25 degrees C and 14 mA at 100 degrees C are achieved for 3.5 mu m wide ridge waveguide lasers using the compressive-strained single quantum well.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; indium compounds; optical waveguides; semiconductor lasers; 1.3 micron; 100 degC; 14 mA; 2 mA; 25 degC; 3.5 micron; Al xGa yIn 1-x-yAs quantum well lasers; GRINSCH; compressive-strained single quantum well; ridge waveguide lasers; strained layer QW laser; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921495
