• DocumentCode
    842721
  • Title

    Low threshold 1.3 mu m strained-layer AlxGayIn1-x-yAs quantum well lasers

  • Author

    Zah, C.E. ; Bhat, Ritesh ; Favire, F.J. ; Koza, M. ; Lee, T.P. ; Darby, D. ; Hsieh, J.J.

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    28
  • Issue
    25
  • fYear
    1992
  • Firstpage
    2323
  • Lastpage
    2325
  • Abstract
    Low threshold 1.3 mu m lasers using compressive- as well as tensile-strained single AlxGayIn1-x-yAs quantum wells (100 and 188 A/cm2, respectively), are demonstrated. Low threshold currents of 2 mA at 25 degrees C and 14 mA at 100 degrees C are achieved for 3.5 mu m wide ridge waveguide lasers using the compressive-strained single quantum well.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; indium compounds; optical waveguides; semiconductor lasers; 1.3 micron; 100 degC; 14 mA; 2 mA; 25 degC; 3.5 micron; Al xGa yIn 1-x-yAs quantum well lasers; GRINSCH; compressive-strained single quantum well; ridge waveguide lasers; strained layer QW laser; threshold currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921495
  • Filename
    191853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842721