DocumentCode
842753
Title
Layout comparison of MOSFETs with large W/L ratios
Author
Vemuru, Srinivasa R.
Author_Institution
Dept. of Electr. Eng., City Coll. of New York, NY, USA
Volume
28
Issue
25
fYear
1992
Firstpage
2327
Lastpage
2329
Abstract
Theory is developed on the layout of MOSFETs with large W/L ratios. Different layout styles are also compared for the performance criteria such as area, gate capacitance, drain (source) capacitances and gate resistances. The waffle iron layout style is superior to conventional finger layout in terms of area and gate resistance, whereas finger layout has lower gate capacitance.
Keywords
MOS integrated circuits; capacitance; circuit layout; insulated gate field effect transistors; linear integrated circuits; MOSFETs; analogue circuit design; area; drain capacitance; finger layout; gate capacitance; gate resistances; large width to length ratio; layout styles; source capacitance; waffle iron layout style;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921498
Filename
191856
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