Title :
Comments on the ´Accuracy of relaxation time approximation for device simulation of submicrometer GaAs MESFETs´
Author_Institution :
Tech. Univ. Hamburg-Harburg, Germany
Abstract :
For the original article see ibid., vol.28, no.4, p.393-5 (1992). Recently, some results concerning a comparison between Monte Carlo simulations and the hydrodynamic transport model in its single gas formulation have been published by Y. Yamada and T. Tomita. Several aspects of their work are critically discussed by the commenter who concludes that no new information is given.
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; gallium arsenide; relaxation; semiconductor device models; simulation; GaAs; Monte Carlo simulations; device simulation; hydrodynamic transport model; relaxation time approximation; single gas formulation; submicron MESFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921501
