DocumentCode
842764
Title
Comments on the ´Accuracy of relaxation time approximation for device simulation of submicrometer GaAs MESFETs´
Author
Curow, M.
Author_Institution
Tech. Univ. Hamburg-Harburg, Germany
Volume
28
Issue
25
fYear
1992
Firstpage
2329
Lastpage
2330
Abstract
For the original article see ibid., vol.28, no.4, p.393-5 (1992). Recently, some results concerning a comparison between Monte Carlo simulations and the hydrodynamic transport model in its single gas formulation have been published by Y. Yamada and T. Tomita. Several aspects of their work are critically discussed by the commenter who concludes that no new information is given.
Keywords
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; gallium arsenide; relaxation; semiconductor device models; simulation; GaAs; Monte Carlo simulations; device simulation; hydrodynamic transport model; relaxation time approximation; single gas formulation; submicron MESFET;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921501
Filename
191858
Link To Document