DocumentCode :
842852
Title :
35 GHz ft and 26 GHz fmax GaInP/GaAs heterojunction bipolar transistors
Author :
Prasad, S.J. ; Haynes, C. ; Vetanen, B. ; Park, Soojin ; Beers, I.
Author_Institution :
Electron. Res. Labs., Tektronix, Beaverton, OR, USA
Volume :
28
Issue :
25
fYear :
1992
Firstpage :
2341
Lastpage :
2343
Abstract :
High gain ( beta =175)3*10 mu m2 GaInP/GaAs HBTs fabricated using a triple mess etched non-selfaligned process are reported. The devices show a current gain of 46 even at a collector current of 1 mu A. Microwave measurements indicate the devices have 35 GHz ft and 26 GHz fmax.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 1 muA; 26 GHz; 35 GHz; EHF; GaInP-GaAs; HBTs; SHF; collector current; heterojunction bipolar transistors; non-selfaligned process; triple mess etched;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921509
Filename :
191866
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=842852
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