Title :
High-power InGaAs/GaAs singlemode laser diodes with reactive-ion-etched ridges
Author :
Ou, S.S. ; Yang, Jie J. ; Jansen, Maarten ; Hess, Christopher ; Sergant, M. ; Tu, Chun-Da ; Alvarez, Federico ; Lembo, L.J.
Author_Institution :
TRW, Res. Centre, Redondo Park, CA, USA
Abstract :
Continuous-wave (CW) output powers in excess of 320 mW with fabrication yields as high as 90% have been realised from strained-layer InGaAs/GaAs ridge waveguide laser diodes fabricated by SiCl4 reactive ion etching. Single longitudinal mode operation to 100 mW and single spatial mode operation up to 200 mW CW at a wavelength of 965 nm were achieved for 3.5 mu m-wide, 650 mu m-long discrete devices mounted junction-side down. The relative intensity noise at frequencies of 1-2 GHz is approximately 140-150 dB/Hz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; optical waveguides; semiconductor lasers; sputter etching; 1 to 2 GHz; 100 to 320 mW; 3.5 micron; 650 micron; 965 nm; CW output power; GaAs; InGaAs; InGaAs-GaAs; SiCl 4; continuous-wave; fabrication yields; laser diodes; reactive-ion-etched ridges; ridge waveguide; single longitudinal mode operation; single spatial mode operation; singlemode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921511
