Title :
Comments on "Postbreakdown Current in MOS Structures: Extraction of Parameters Using the Integral Difference Function Method
Author_Institution :
Escola Tecnica Superior d´Enginyeria, Univ. Autonoma de Barcelona, Bellaterra
Abstract :
For original paper by E. Miranda see ibid. vol. 6, no. 2, p. 190-96, Jun. 2006
Keywords :
MIS structures; integro-differential equations; leakage currents; Lambert W function; MOS structures; integral difference function method; parameter extraction; postbreakdown current; ultrathin oxides; Circuit simulation; Computational modeling; Data analysis; Data mining; Embedded software; Equations; Leakage current; MOS devices; Packaging; Software packages;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2006.883945
