DocumentCode :
843191
Title :
Effect of Oxygen Pressure on the Electrical Properties of 
Films Grown by RF Magnetron Sputtering
Author :
Cho, Kyung-Hoon ; Choi, Chang-Hak ; Choi, Joo-Young ; Seong, Tae-Geun ; Nahm, Sahn ; Kang, Chong-Yun ; Yoon, Seok-Jin ; Kim, Jong-Hee
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Univ., Seoul
Volume :
29
Issue :
9
fYear :
2008
Firstpage :
984
Lastpage :
987
Abstract :
Bi5Nb3O15 (B5N3) films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 A/cm2 at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of 5.8 times 10-9 A/cm2 for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 fF /mum2. The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the B5N3 film can be obtained by careful control of OP.
Keywords :
bismuth compounds; capacitance; current density; dielectric thin films; electric breakdown; interstitials; leakage currents; sputter deposition; sputtered coatings; vacancies (crystal); Bi5Nb3O15; RF magnetron sputtering; electrical properties; leakage current density; low oxygen partial pressure; oxygen interstitial ions; Capacitance; High K dielectric materials; High-K gate dielectrics; Leakage current; MIM capacitors; Magnetic properties; Oxygen; Radio frequency; Sputtering; Temperature; $hbox{Bi}_{5}hbox{Nb}_{3}hbox{O}_{15} (hbox{B}_{5} hbox{N}_{3})$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2001476
Filename :
4604836
Link To Document :
