DocumentCode :
843291
Title :
Demonstration of L_{g} \\sim \\hbox {55} \\hbox {nm} pMOSFETs With \\hbox {Si/Si}_{0.25}\\hbox {Ge}_{0.7</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Lee, Se-Hoon ; Majhi, Prashant ; Oh, Jungwoo ; Sassman, Barry ; Young, Chadwin ; Bowonder, Anupama ; Loh, Wei-Yip ; Choi, Kyu-Jin ; Cho, Byung-Jin ; Lee, Hi-Deok ; Kirsch, Paul ; Harris, Harlan R. ; Tsai, Wilman ; Datta, Suman ; Tseng, Hsing-Huang ; Baner</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Univ. of Texas at Austin, Austin, TX</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>29</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>9</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2008</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1017</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1020</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>High-performance sub-60 nm Si/SiGe (Ge:~75%)/Si heterostructure quantum well pMOSFETs with a conventional MOSFET process flow, including gate-first high-kappa/metal gate stacks with ~1 nm equivalent oxide thickness, are demonstrated. For the first time, short gate length (<i>L</i> <sub>g</sub>) devices demonstrate not only controlled short channel effects, but also an excellent on-off current (<i>I</i> <sub>on</sub>/<i>I</i> <sub>off</sub>) ratio (~5times10<sup>4</sup> 55-nm <i>L</i> <sub>g</sub>). The intrinsic gate delay of these heterostructures is ~3 ps at <i>I</i> <sub>on</sub>/<i>I</i> <sub>off</sub>~10<sup>4</sup>. OFF-state leakage was minimized by controlling the defects in the epitaxial films. Finally, these short <i>L</i> <sub>g</sub> devices, when benchmarked against state-of-the-art Si channel pMOSFETs, appear to be very promising in replacing the Si channel in CMOS scaling.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor quantum wells; silicon; MOSFET process flow; OFF-state leakage; Si<sub>0.25</sub>Ge<sub>0.75</sub>-Si; controlled short channel effects; epitaxial films; equivalent oxide thickness; gate-first high-k/metal gate stacks; high-performance sub-60 nm heterostructure quantum well; intrinsic gate delay; on-off current; pMOSFET; short gate length devices; Delay effects; Germanium silicon alloys; Jamming; MOSFET circuits; Photonic band gap; Silicon germanium; Thickness control; Threshold voltage; Transmission electron microscopy; Tunneling; Band-to-band tunneling (BTBT); effective oxide thickness (EOT); intrinsic gate delay; short channel effect (SCE); silicon germanium (SiGe);</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Device Letters, IEEE</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0741-3106</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/LED.2008.2002073</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>4604846</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=843291' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=843291</a></div> </div> </div> <div class='leftDiv labelDiv leftAlign backLinkEnglish'><a href='javascript:history.back()'><img src='../CSS/Back.png' class='backImage' alt=