Title :
20 Gb/s digital SSIs using AlGaAs/GaAs heterojunction bipolar transistors for future optical transmission systems
Author :
Ichino, Haruhiko
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
fDate :
2/1/1993 12:00:00 AM
Abstract :
Design principles for achieving good eye opening and circuit optimization to extract high performance from AlGaAs/GaAs heterojunction bipolar transistor (HBT) devices are described. Using the circuit techniques and HBTs with an fT of 70 GHz and an fmax of 50 GHz, four kinds of SSIs are developed for future optical transmission systems. High-bit-rate operation of over 20 Gb/s (26 GHz toggle flip-flop, 20 Gb/s decision circuit, 20 Gb/s EXCLUSIVE OR/NOR gate, and 28 Gb/s selector IC), extremely fast rise and fall times (20-80%) of 20 and 14 ps, respectively, and good eye opening are obtained. In addition, potential performance gains that might be realized through advanced circuit and device design are appraised, and throughputs as fast as 40 Gb/s are predicted
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital communication systems; digital integrated circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; integrated logic circuits; optical communication equipment; 14 ps; 20 Gbit/s; 20 ps; 26 to 70 GHz; 28 Gbit/s; AlGaAs-GaAs; EXCLUSIVE OR/NOR gate; HBTs; decision circuit; digital SSI; heterojunction bipolar transistors; logic gate; optical transmission systems; selector IC; toggle flip-flop; Application specific integrated circuits; Circuit optimization; Circuit synthesis; Gallium arsenide; Heterojunction bipolar transistors; High speed optical techniques; Logic circuits; Optical modulation; Throughput; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
