Title :
Piezoelectric Aluminum Nitride Vibrating Contour-Mode MEMS Resonators
Author :
Piazza, Gianluca ; Stephanou, Philip J. ; Pisano, Albert P.
Author_Institution :
Dept. of Electr. & Syst. Eng., Pennsylvania Univ., Philadelphia, PA
Abstract :
This paper reports theoretical analysis and experimental results on a new class of rectangular plate and ring-shaped contour-mode piezoelectric aluminum nitride radio-frequency microelectromechanical systems resonators that span a frequency range from 19 to 656 MHz showing high-quality factors in air (Qmax=4300 at 229.9 MHz), low motional resistance (ranging from 50 to 700 Omega), and center frequencies that are lithographically defined. These resonators achieve the lowest value of motional resistance ever reported for contour-mode resonators and combine it with high Q factors, therefore enabling the fabrication of arrays of high-performance microresonators with different frequencies on a single chip. Uncompensated temperature coefficients of frequency of approximately -25 ppm/degC were also recorded for these resonators. Initial discussions on mass loading mechanisms induced by metal electrodes and energy loss phenomenon are provided
Keywords :
III-V semiconductors; Q-factor; aluminium compounds; crystal resonators; micromechanical resonators; wide band gap semiconductors; 19 to 656 MHz; AlN; contour-mode MEMS resonators; contour-mode piezoelectric aluminum nitride; contour-mode resonators; energy loss phenomenon; high Q factors; mass loading mechanisms; metal electrodes; piezoelectric resonators; radiofrequency MEMS resonators; rectangular plate; ring-shaped piezoelectric aluminum nitride; Aluminum nitride; Electrodes; Fabrication; Microcavities; Microelectromechanical systems; Micromechanical devices; Motion analysis; Q factor; Radio frequency; Temperature; Aluminum nitride; contour-mode resonators; microelectromechanical systems (MEMS) resonators; piezoelectric resonators; radio-frequency (RF) MEMS;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2006.886012