Analytical and experimental methods for zero-temperature-coefficient biasing of MOS transistors

Analytical and experimental results are presented which yield new design insights for VLSI CMOS circuits to be operated over wide temperature ranges (25-250 degrees C). The significant influence of the body voltage on the zero-temperature-coefficient (ZTC) drain current characteristics of MOSFETs is reported and modelled. Results suggest that state-of-the-art VLSI CMOS technologies can be used to design on-chip voltage and current references and therefore a wide class of signal processing IC functions, which are stable over wider temperature ranges than have been achieved to date.