Title :
Improvement of AlInP-AlGaInP MQW light-emitting diode by meshed contact layer
Author :
Wang, H.C. ; Su, Y.K. ; Lin, C.L. ; Chen, W.B. ; Chen, S.M.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The optical output power of the AlInP-AlGaInP light-emitting diodes was pronouncedly enhanced 1.45 times at 20 mA without degrading the electrical characteristics by introducing the meshed GaAs contact layer. Both theoretical simulation and experimental analysis were used to demonstrate the feasibility of the proposed structure.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; 20 mA; AlInP-AlGaInP; AlInP-AlGaInP MQW light-emitting diode; GaAs; electrical characteristics; meshed GaAs contact layer; meshed contact layer; optical output power; Absorption; Contact resistance; Current density; Degradation; Electric variables; Gallium arsenide; Indium tin oxide; Light emitting diodes; Quantum well devices; Transistors;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.803369
