New Insight Into NBTI Transient Behavior Observed From Fast- $G_{M}$ Measurements

Fast-I_DV_G measurements have become an important tool to examine MOSFET transient degradation. The threshold voltage (V _TH) extracted from fast-I_DV_G measurements is often used to infer the transient behavior of trapped charges in the gate dielectric and at the interface. In this letter, we show that the peak transconductance (G_M) can also be extracted reliably in the microsecond time scale. The transient G_M behavior provides additional insights not easily observed from an examination of V_TH alone. Specifically, transient GM results illustrate that an electron trapping/detrapping transient component contributes to the transient behavior observed in the negative bias temperature instability. This electron trapping component has never been reported.