DocumentCode
843611
Title
Photovoltaic potential induced by 10 mu m laser radiation in Si photodiodes
Author
Ferrari, E. Domínguez ; Sanz, F. Encinas ; Pérez, J. M Guerra
Author_Institution
Inst. de Fisica Aplicada L. Torres Quevedo, Madrid, Spain
Volume
1
Issue
12
fYear
1989
Firstpage
469
Lastpage
471
Abstract
Photon drag and photovoltaic response observed in p/sup +//n and n/sup +//p silicon junctions excited by moderated-power-density 10- mu m radiation are discussed. A multistep multiphotonic process through intermediate states located within the energy gap is proposed as the mechanism responsible for the photovoltaic potential.<>
Keywords
elemental semiconductors; infrared detectors; photodiodes; silicon; 10 micron; Si photodiodes; energy gap; laser radiation; moderated-power-density radiation; multistep multiphotonic process; n/sup +//p silicon junctions; p/sup +//n silicon junctions; photo drag; photovoltaic potential; photovoltaic response; semiconductor; Argon; Gold; Laser modes; Optical pulses; Photodiodes; Photovoltaic systems; Pulse measurements; Silicon; Solar power generation; Switches;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.46053
Filename
46053
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