DocumentCode :
843688
Title :
Abrupt Delta-Doped InP/GaInAs/InP DHBTs With 0.45- 
-Wide T-Shaped Emitter Contacts
Author :
Elias, Doron Cohen ; Gavrilov, Arkadi ; Cohen, Shimon ; Kraus, Shraga ; Sayag, Avi ; Ritter, Dan
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa
Volume :
29
Issue :
9
fYear :
2008
Firstpage :
971
Lastpage :
973
Abstract :
An abrupt pulse-doped InP/GaInAs/InP double heterojunction bipolar transistor having a 0.45- mum-wide T-shaped emitter metal is reported. These two promising technologies for sub-100-nm emitters were previously demonstrated only for 1- mum emitters. The device exhibited typical dc and microwave performance to 0.5- mum emitter devices.
Keywords :
gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; InP-GaInAs-InP; T-shaped emitter contacts; delta-doped DHBT; double heterojunction bipolar transistor; size 0.45 mum; Current density; Doping; Double heterojunction bipolar transistors; Gold; Helium; Heterojunction bipolar transistors; Indium phosphide; Microwave devices; Neodymium; Thermal conductivity; Double heterojunction bipolar transistors (DHBTs); InP; T-shaped emitter; pulse doping;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2001738
Filename :
4606264
Link To Document :
