• DocumentCode
    843688
  • Title

    Abrupt Delta-Doped InP/GaInAs/InP DHBTs With 0.45- \\mu\\hbox {m} -Wide T-Shaped Emitter Contacts

  • Author

    Elias, Doron Cohen ; Gavrilov, Arkadi ; Cohen, Shimon ; Kraus, Shraga ; Sayag, Avi ; Ritter, Dan

  • Author_Institution
    Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa
  • Volume
    29
  • Issue
    9
  • fYear
    2008
  • Firstpage
    971
  • Lastpage
    973
  • Abstract
    An abrupt pulse-doped InP/GaInAs/InP double heterojunction bipolar transistor having a 0.45- mum-wide T-shaped emitter metal is reported. These two promising technologies for sub-100-nm emitters were previously demonstrated only for 1- mum emitters. The device exhibited typical dc and microwave performance to 0.5- mum emitter devices.
  • Keywords
    gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; InP-GaInAs-InP; T-shaped emitter contacts; delta-doped DHBT; double heterojunction bipolar transistor; size 0.45 mum; Current density; Doping; Double heterojunction bipolar transistors; Gold; Helium; Heterojunction bipolar transistors; Indium phosphide; Microwave devices; Neodymium; Thermal conductivity; Double heterojunction bipolar transistors (DHBTs); InP; T-shaped emitter; pulse doping;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2001738
  • Filename
    4606264
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=843688