High Performance Spiral Inductor on Deep-Trench-Mesh Silicon Substrate

Author

Tu, Hsin-Lung ; Chen, I. Shan ; Yeh, Ping-Chun ; Chiou, Hwann-Kaeo

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli

Volume

16

Issue

12

fYear

2006

Firstpage

654

Lastpage

656

Abstract

This letter presented the octagonal spiral inductors on deep-trench-mesh substrate which obtained a high self resonant frequency (f_res) and high peak quality factor (Q_peak) in a 0.35-mum 3P3M SiGe BiCMOS process. The main advantages of the deep-trench-mesh structure were twofold: 1) deep-trench-mesh pattern decreased capacitive coupling and increased f_res by 10% compared to a conventional structure and 2) decreased resistive losses and increased Q_peak around 15%. The overall figure-of-merit was improved by 28% while dealing with Q_peak, f_res, and chip area. Meanwhile, a broad Q_peak frequency response was found in deep-trench-mesh inductors

Keywords

BiCMOS integrated circuits; Ge-Si alloys; Q-factor; frequency response; inductors; 0.35 micron; BiCMOS process; SiGe; capacitive coupling; deep-trench-mesh inductors; deep-trench-mesh pattern; deep-trench-mesh silicon substrate; deep-trench-mesh structure; frequency response; octagonal spiral inductors; quality factor; resistive losses; self resonant frequency; Capacitance; Couplings; Dielectric substrates; Eddy currents; Frequency estimation; Inductors; Q factor; Resonant frequency; Silicon; Spirals; Deep-trench-mesh; inductor; quality factor; resonant frequency;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.885608

Filename

4020327