Title :
Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s
Author :
Blokhin, S.A. ; Lott, J.A. ; Mutig, A. ; Fiol, G. ; Ledentsov, N.N. ; Maximov, M.V. ; Nadtochiy, A.M. ; Shchukin, V.A. ; Bimberg, D.
Author_Institution :
Inst. of Solid-State Phys., Tech. Univ. Berlin, Berlin
Abstract :
Oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s at current densities ~10 kA/cm2 are realised. The deconvoluted rise time of the device is below 10 ps and remains hardly temperature sensitive up to 100degC.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; surface emitting lasers; bit rate 40 Gbit/s; current density; deconvoluted rise time; error-free transmission; eye diagram; oxide-confined VCSEL; ultra-high speed data transmission; vertical-cavity surface-emitting laser; wavelength 850 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.0552
